
  IBM13M8734HCC
8M x 72 1 Bank Registered/Buffered SDRAM Module
19L7145.E93758B
2/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 21
Features
 168-Pin Registered 8-Byte Dual In-Line Memory
Module
 8Mx72 Synchronous DRAM DIMM
 Performance:
 Intended for 66/100MHz and PC100 applications
 Inputs and outputs are LVTTL (3.3V) compatible
 Single 3.3V
 ±
 0.3V Power Supply
 Single Pulsed RAS interface
 SDRAMs have four internal banks
 Module has one physical bank
 Fully Synchronous to positive Clock Edge
 Programmable Operation:
- DIMM CAS Latency:3, 4 (Registered mode),
2, 3 (Buffered mode)
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-Page
supports Sequential burst only)
- Operation: Burst Read and Write
or Multiple Burst Read with Single Write
 Data Mask for Byte Read/Write control
 Auto Refresh (CBR) and Self Refresh
 Automatic and controlled Precharge Commands
 Suspend Mode and Power Down Mode
 12/9/2 Addressing (Row/Column/Bank)
 4096 refresh cycles distributed across 64ms
 Card size: 5.25" x 1.5" x 0.157"
 Gold contacts
 SDRAM
S
 in TSOP - Type II Package
Description
IBM13M8734HCC is a registered 168-Pin Synchro-
nous DRAM Dual In-Line Memory Module (DIMM)
organized as an 8Mx72 high-speed memory array.
The DIMM uses nine 8Mx8 SDRAMs in 400 mil
TSOP packages. The DIMM achieves high-speed
data-transfer rates of up to 100 MHz by employing a
prefetch/pipeline hybrid architecture that synchro-
nizes the output data to a system clock.
The DIMM is intended for use in applications operat-
ing from 66MHz to 100 MHz, PC100, memory bus
speeds, and/or heavily loaded bus applications. All
control and address signals are re-driven through
registers/buffers to the SDRAM devices. The DIMM
can be operated in either registered mode (REGE
pin tied high), where the control/address input sig-
nals are latched in the register on one rising clock
edge and sent to the SDRAM devices on the follow-
ing rising clock edge (data access is delayed by one
clock), or in buffered mode (REGE pin tied low)
where the input signals pass through the regis-
ter/buffer to the SDRAM devices on the same clock.
XTK simulation models of the DIMM are available to
determine which mode to design for.
A phase-lock loop (PLL) on the DIMM is used to re-
drive the clock signals to the SDRAM devices to min-
imize system clock loading. (CK0 is connected to the
PLL, and CK1, CK2, and CK3 are terminated on the
DIMM.) A single clock enable (CKE0) controls all
devices on the DIMM, enabling the use of SDRAM
power-down modes.
Prior to any access operation, the device CAS
latency and burst type/length/operation type must be
programmed into the DIMM by address inputs A0-A9
using the mode register set cycle. The DIMM CAS
latency when operated in buffered mode is the same
as the device CAS latency as specified in the SPD
EEPROM. The DIMM CAS latency when operated in
registered mode is one clock later due to the address
and control signals being clocked to the SDRAM
devices.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two-pin IIC
protocol. The first 128 bytes of serial PD data are
programmed and locked by the DIMM manufacturer.
The last 128 bytes are available to the customer and
may be write protected by providing a high level to
pin 81 on the DIMM. An on-board pulldown resistor
keeps this in the write-enable mode.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25" long space-saving
footprint.
-10
-260, -360
(PC100)
Reg.
3
Units
Reg.
3
Buff.
2
Buff
2
DIMM CAS Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
t
AC
Clock Access Time
66
66
100
100
MHz
15
15
10
10
ns
9.7
9.7
7.7
7.7
ns
IBM11M4730C4M x 72 E12/10, 5.0V, Au.
Discontinued (8/99 - last order; 12/99 - last ship)