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| 型號(hào)： | IBM13M64734BCA |
| 廠商： | IBM Microeletronics |
| 英文描述： | 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1組寄存/緩沖同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 64米× 72 1銀行注冊(cè)/緩沖內(nèi)存模組（64米× 72 1組寄存/緩沖同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 12/20頁(yè) |
| 文件大?。?/td> | 499K |
| 代理商： | IBM13M64734BCA |
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IBM13M64734BCA
64M x 72 1 Bank Registered/Buffered SDRAM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 12 of 20
19L7159.E93855
2/00
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
DIMM Operational Parameters
Clock Cycle
Units
Notes
-10ns
-15ns
Operating Current
1 bank operation
I
CC1
t
RC
=
t
RC
(min), t
CK
= min
Active-Precharge command cycling
without burst operation
2298
1760
mA
1, 2
Precharge Standby Current in
Power Down Mode
I
CC2P
CKE0
≤
V
IL
(max), t
CK
= min,
CS =V
IH
(min)
264
194
mA
1, 2
I
CC2PS
CKE0
≤
V
IL
(max), t
CK
= Infinity,
S0, S2 =V
IH
(min)
75
75
mA
Precharge Standby Current in Non-
Power Down Mode
I
CC2N
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
588
518
mA
1, 2
I
CC2NS
CKE0
≥
V
IH
(min), t
CK
= Infinity,
S0, S2 =V
IH
(min)
147
147
mA
No Operating Current
(Active state: 4bank)
I
CC3N
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
1038
698
mA
1
I
CC3P
CKE0
≤
V
IL
(max), t
CK
= min,
S0, S2 =V
IH
(min)
(Power Down Mode)
336
266
mA
1
Burst Operating Current
(Active state: 4 bank)
I
CC4
t
CK
= min,
Read/Write command cycling Multiple
banks active, Gapless date BL =4
2298
1544
mA
1, 2
Auto (CBR) Refresh Current
I
CC5
t
CK
= t
CK
(min), t
RC
= t
RC
(min)
CBR command cycling
3298
2534
mA
1
Self Refresh Current
I
CC6
CKE0
≤
0.2V
93
93
mA
1. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
.
Input signals are changed once during t
CK
(min).
2. The specified values are obtained with the DIMM data outputs open.
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