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參數(shù)資料
| 型號(hào)： | IBM13M32734CCB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 32M x 72 1-Bank Registered / Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 32M × 72配置1，銀行注冊(cè)/緩沖內(nèi)存模組（32M × 72配置1組寄存/緩沖同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 10/20頁(yè) |
| 文件大?。?/td> | 364K |
| 代理商： | IBM13M32734CCB |
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IBM13M32734CCB
32M x 72 1-Bank Registered / Buffered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 20
06K7740.H03381
04/00
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70C, V
DD
= 3.3V 0.3V)
Parameter
Symbol
Test Condition
Speed
-75A
Units
Notes
Operating Current 1 bank operation
I
CC1
t
RC
=
t
RC
(min), t
CK
= min
Active-Precharge command cycling
without burst operation
1782
mA
1
Precharge Standby Current in Power Down Mode
I
CC2P
CKE0
≤
V
IL
(max), t
CK
= min,
CS =V
IH
(min)
270
mA
1
I
CC2PS
CKE0
≤
V
IL
(max), t
CK
= Infinity,
S0, S2 =V
IH
(min)
36
mA
Precharge Standby Current in Non-Power Down Mode
I
CC2
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
1062
mA
1
I
CC2S
CKE0
≥
V
IH
(min), t
CK
= Infinity,
S0, S2 =V
IH
(min)
198
mA
No Operating Current
(Active state: 4bank)
I
CC3
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
1152
mA
1
I
CC3P
CKE0
≤
V
IL
(max), t
CK
= min,
S0, S2 =V
IH
(min)
(Power Down Mode)
432
mA
1
Burst Operating Current
(Active state: 4bank)
I
CC4
t
CK
= min,
Read command cycling
2160
mA
1, 2
Auto (CBR) Refresh Current
I
CC5
t
CK
= min,
CBR command cycling
3549
mA
1
Self Refresh Current
I
CC6
CKE0
≤
0.2V
54
mA
1. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
.
Input signals are changed once during t
CK
(min). t
CK
(min) = 7.5ns.
2. The specified values are obtained with the DIMM data outputs open.
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