參數(shù)資料
型號(hào)： IBM13M32734BCC
廠商： IBM Microeletronics
英文描述： 32M x 72 2 Bank Registered SDRAM Module(32M x 72 2組寄存同步動(dòng)態(tài)RAM模塊)
中文描述： 32M × 72配置2銀行注冊(cè)內(nèi)存模塊（32M × 72配置2組寄存同步動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 12/19頁(yè)
文件大?。?/td> 388K
代理商： IBM13M32734BCC
IBM13M32734BCC
32M x 72 2 Bank Registered SDRAM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 12 of 19
88H5165.E24449
4/98
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
Test Condition
Speed
Units
Notes
-3-360,
Burst Operating Mode/Active
Standby
I
CC4
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
4090
2727
mA
2, 3, 4
Burst Operating Mode/Precharge
Standby
I
CC4
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3910
2607
mA
2, 3, 4
Burst Operating Mode/Auto Refresh
I
CC4
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5620
4137
mA
2, 3, 4
Non-burst Operating Mode/Active
Standby
I
CC1
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3550
2577
mA
2, 3, 4
Non-burst Operating Mode/Pre-
charge Standby
I
CC1
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3370
2457
mA
2, 3, 4
Non-burst Operating Mode/Auto
Refresh
I
CC1
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5080
3987
mA
2, 4
Active Standby/Active Standby
I
CC3
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2290
1527
mA
4
Active Standby/Precharge Standby
I
CC3
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2110
1407
mA
4
Active Standby/Auto Refresh
I
CC3
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3820
2937
mA
2, 4
Precharge Standby/Precharge
Standby
I
CC2
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1930
1287
mA
4
Precharge Standby/Auto Refresh
I
CC2
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3640
2817
mA
2, 4
Auto Refresh/Auto Refresh
I
CC5
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5350
4347
mA
2, 4
Active Standby Power Down/Active
Standby Power Down
I
CC3p
/I
CC3p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
598
399
mA
4
Active Standby Power Down/Pre-
charge Standby Power Down
I
CC3p
/I
CC2p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
508
339
mA
4
Precharge Standby Power
Down/Precharge Standby Power
Down
I
CC3p
/I
CC2p
CKE
≤
V
(max), t
= min,
S0 - S3 =V
IH
(min)
418
279
mA
4
Precharge Standby Non-power
Down/Precharge Standby Non-
power Down
(NO CLOCK)
I
CC2S
/I
CC2S
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
195
195
mA
4
Precharge Standby Power
Down/Precharge Standby Power
Down
(NO CLOCK)
I
CC2PS
/I
CC2PS
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
87
87
mA
4
1. All -10 currents are calculated assuming t
CK
= 15ns (f
CK
= 66MHz).
2. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
. Input
signals are changed once during t
CK
(min). t
CK
(min) = 10ns (for -360/-365/-370) and 15ns (for -10).
3. The specified values are obtained with the output open.
4. These parameters and symbols refer to a combination of physical bank 0/physical bank 1.
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