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參數資料
| 型號： | IBM11D4490BG |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 36 ECC-on-SIMM w/ Error Lines(4M x 36動態(tài)RAM模塊（片上帶糾錯代碼功能）) |
| 中文描述： | 4米× 36 ECC的問題，上海藥物研究所瓦特/錯誤行（4米× 36動態(tài)內存模塊（片上帶糾錯代碼功能）） |
| 文件頁數： | 9/20頁 |
| 文件大?。?/td> | 293K |
| 代理商： | IBM11D4490BG |
IBM11E4490BG
IBM11E8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
IBM11D4490BG
IBM11D8490BG
Preliminary
75H3879
Revised 10/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 20
Fast Page Mode Cycle
Symbol
Parameter
-70
Units
Notes
Min
Max
t
PC
Fast Page Mode Cycle Time
45
—
ns
t
RASP
Fast Page Mode RAS Pulse Width
70
100K
ns
t
CPRH
RAS Hold Time from CAS Precharge
40
—
ns
t
CPA
Access Time from CAS Precharge
—
45
ns
1, 2
1. Access time is determined by the latter of t
RAC
, t
CAC
, t
CPA
, t
AA
.
2. Access time assumes a load of 100pF.
Read Error-Line Functionality Cycle
Symbol
Parameter
-70
Units
Notes
Min
Max
t
ERR
Error access time from CAS
—
20
ns
1, 2
t
ECH
Error Output Hold/Hi-Z
3
20
ns
t
ECLZ
CAS to Error Output in Low-Z
0
—
ns
t
ERCS
Error Read Command Setup Time
0
—
ns
t
ERCH
Error Read Command Hold Time
3
—
ns
1. RAS is a “don’t care”.
2. ADDRESS and DATA are the specified address and read data.
Refresh Cycle
Symbol
Parameter
-70
Units
Notes
Min
Max
t
CHR
CAS Hold Time
(CAS before RAS Refresh Cycle)
10
—
ns
t
CSR
CAS Setup Time
(CAS before RAS Refresh Cycle)
5
—
ns
t
WRP
WE Setup Time
(CAS before RAS Refresh Cycle)
5
—
ns
t
WRH
WE Hold Time
(CAS before RAS Refresh Cycle)
10
—
ns
t
RPC
RAS Precharge to CAS Hold Time
5
—
ns
t
REF
Refresh Period
—
32
ms
1
1. 2048 refreshes are required every 32ms. The DC variation in the V
CC
supply may not exceed 300mV within a refresh interval
(32ms).
Discontinued (7/00 - last order; 9/00 - last ship)
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