參數(shù)資料
型號(hào): IBM11D4490BG
廠商: IBM Microeletronics
英文描述: 4M x 36 ECC-on-SIMM w/ Error Lines(4M x 36動(dòng)態(tài)RAM模塊(片上帶糾錯(cuò)代碼功能))
中文描述: 4米× 36 ECC的問(wèn)題,上海藥物研究所瓦特/錯(cuò)誤行(4米× 36動(dòng)態(tài)內(nèi)存模塊(片上帶糾錯(cuò)代碼功能))
文件頁(yè)數(shù): 15/20頁(yè)
文件大?。?/td> 293K
代理商: IBM11D4490BG
IBM11E4490BG
IBM11E8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
IBM11D4490BG
IBM11D8490BG
Preliminary
75H3879
Revised 10/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 15 of 20
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Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料
PDF描述
IBM11D8490BG 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊((片上帶糾錯(cuò)代碼功能))
IBM11E8490BG 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊(片上帶糾錯(cuò)代碼功能))
IBM11E8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊)
IBM11D8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊)
IBM11M2640HB 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊)
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