參數(shù)資料
型號(hào)： HYE25L256160AF-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： CAP TANT 10UF 6.3V 20% SMD
中文描述： 片256Mbit移動(dòng)- RAM的
文件頁(yè)數(shù)： 25/55頁(yè)
文件大小： 1053K
代理商： HYE25L256160AF-75
Data Sheet
25
V1.1, 2003-04-16
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
5
Timing Diagrams
Figure 5
Bank Activate Command Cycle
Figure 6
Burst Read Operation
Figure 7
Read Interrupted by a Read
Read to Write Interval
–
Figure 8
Read to Write Interval
–
Figure 9
Minimum Read to Write Interval
–
Figure 10
Non-Minimum Read to Write Interval
Figure 11
Burst Write Operation
Write and Read Interrupt
–
Figure 12
Write Interrupted by a Write
–
Figure 13
Write Interrupted by Read
Burst Write & Read with Auto-Precharge
–
Figure 14
Burst Write with Auto-Precharge
–
Figure 15
Burst Read with Auto-Precharge
AC- Parameters
–
Figure 16
AC Parameters for a Write Timing
–
Figure 17
AC Parameters for a Read Timing
Figure 18
Mode Register Set
Figure 19
Power on Sequence and Auto Refresh (CBR)
Clock Suspension (using CKE)
–
Figure 20
Clock Suspension During Burst Read CAS Latency = 2
–
Figure 21
Clock Suspension During Burst Read CAS Latency = 3
–
Figure 22
Clock Suspension During Burst Write CAS Latency = 2
–
Figure 23
Clock Suspension During Burst Write CAS Latency = 3
Figure 24
Power Down Mode and Clock Suspend
Figure 25
Self Refresh (Entry and Exit)
Figure 26
Auto Refresh (CBR)
Random Column Read ( Page within same Bank)
–
Figure 27
CAS Latency = 2
–
Figure 28
CAS Latency = 3
Random Column Write ( Page within same Bank)
–
Figure 29
CAS Latency = 2
–
Figure 30
CAS Latency = 3
Random Row Read (Interleaving Banks) with Precharge
–
Figure 31
CAS Latency = 2
–
Figure 32
CAS Latency = 3
Random Row Write (Interleaving Banks) with Precharge
–
Figure 33
CAS Latency = 2
–
Figure 34
CAS Latency = 3
Precharge Termination of a Burst
–
Figure 35
CAS Latency = 2
Deep Power Down Mode
–
Figure 36
Deep Power Down Mode Entry
–
Figure 37
Deep Power Down Mode Exit
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