參數(shù)資料
型號(hào): HYE25L256160AF-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: CAP TANT 10UF 6.3V 20% SMD
中文描述: 片256Mbit移動(dòng)- RAM的
文件頁(yè)數(shù): 24/55頁(yè)
文件大?。?/td> 1053K
代理商: HYE25L256160AF-75
HYE25L256160AC
256-Mbit Mobile-RAM
Electrical Characteristics
Data Sheet
24
V1.1, 2003-04-16
Table 12
Parameter
I
DD6
Programmable Self Refresh Current
1)2)
Symbol –8, –7.5 Unit
T
CASE
1) Recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
Note/ Test Condition
max.
t.b.d.
250
475
725
t.b.d.
150
250
450
t.b.d.
100
150
275
TCSR
3)
max. 15°C
max. 45°C
max. 70°C
max. 85°C
max. 15°C
max. 45°C
max. 70°C
max. 85°C
max. 15°C
max. 45°C
max. 70°C
max. 85°C
3) Extended Mode Register A4-A3, see
“Temperature Compensated Self Refresh with On-Chip Temperature Sensor”
on Page 13
Self refresh current
Self refresh mode,
full array activations = all banks
I
DD6
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
t
CK
=infinity,
CKE = 0.2 V
4)
4) Target values to be verified on final product and may change.
Self refresh current
Self refresh mode,
half array activations = bank 0 + 1
I
DD6
t
CK
=infinity,
CKE = 0.2 V
4)
Self refresh current
Self refresh mode,
quarter array activations = bank 0
I
DD6
t
CK
=infinity,
CKE = 0.2 V
4)
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