參數(shù)資料
型號(hào): HYE25L256160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit Mobile-RAM
中文描述: 256兆移動(dòng)RAM
文件頁數(shù): 9/55頁
文件大?。?/td> 1053K
代理商: HYE25L256160AC
8192 x 512
x 16 Bit
Data Sheet
9
V1.1, 2003-04-16
HYE25L256160AC
256-Mbit Mobile-RAM
Pin Configuration
Figure 2
Block Diagram (16 Mbit
×
16, 13 / 9 / 2 Addressing)
Note:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DQM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional
DQ signals.
Memory
Array
Bank 1
Memory
Array
Bank 2
8192 x 512
x 16 Bit
Memory
Array
Bank 3
8192 x 512
x 16 Bit
SPB04124_256M
Column Address
Counter
Row
Decoder
Memory
Array
Bank 0
8192 x 512
x 16 Bit
C
S
Row
Decoder
S
Row
Decoder
Row
Decoder
C
S
Row Address
Buffer
Column Address
Buffer
Refresh Counter
S
A0 - A12,
BA0, BA1
A0 - A8, AP,
BA0, BA1
Column Addresses
Row Addresses
Input Buffer
Output Buffer
DQ0 - DQ15
Control Logic &
Timing Generator
C
C
C
R
C
W
U
L
C
C
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