參數(shù)資料
型號: HYE25L256160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit Mobile-RAM
中文描述: 256兆移動RAM
文件頁數(shù): 14/55頁
文件大?。?/td> 1053K
代理商: HYE25L256160AC
HYE25L256160AC
256-Mbit Mobile-RAM
Functional Description
Data Sheet
14
V1.1, 2003-04-16
EMR
Extended Mode Register Definition
(BA[1:0] = 10
B
)
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
0
MODE
TCSR
PASR
reg. addr
w
w
w
Field
PASR
Bits
[2:0]
Type
w
Description
1)
Partial Array Self Refresh
See
Chapter 3.3.1
000 banks to be self refreshed: all 4 of 4
001 banks to be self refreshed: 2 of 4, BA[1:0] = 00
B
or 01
B
010 banks to be self refreshed: 1 of 4, BA[1:0] = 00
B
101 banks to be self refreshed: 0.5 of 4, BA[1:0] = 00
B
& RA12 = 0
B
110 banks to be self refreshed: 0.25 of 4, BA[1:0] = 00
B
& RA[12:11] = 00
B
Temperature Compensated Self Refresh
See
Chapter 3.3.2
.
00
on-chip temperature sensor enabled
01
Maximum case temperature: 45°C, on-chip temperature sensor disabled
10
Maximum case temperature: 15°C, on-chip temperature sensor disabled
11
Maximum case temperature: 85°C, on-chip temperature sensor disabled
Operating Mode
00h Normal operation
1) All other bit combinations are RESERVED.
TCSR
[4:3]
w
MODE
[12:5]
w
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