參數(shù)資料
型號(hào)： HYE18P32160AC-15
廠商： INFINEON TECHNOLOGIES AG
英文描述： M39012 MIL RF CONNECTOR
中文描述： 32M的同步突發(fā)的CellularRAM
文件頁(yè)數(shù)： 9/53頁(yè)
文件大?。?/td> 1426K
代理商： HYE18P32160AC-15
Data Sheet
9
V2.0, 2003-12-16
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Overview
1.2
General Description
The 32M Synchronous Burst CellularRAM (CellularRAM) is designed to meet the growing memory density and
bandwidth demand in 3G cellular phone designs. Its high density 1T1C-cell concept, the multi-protocol interface
capabilities, its highly optimized low power design and its refresh-free operation make the CellularRAM the perfect
fit for 3G baseband applications.
Configured in synchronous burst mode, a peak bandwidth of > 200 Mbyte/s is achieved at the max. clock rate of
104 MHz. The burst length can be programmed and set to either fixed burst lengths of 4, 8- or 16-words
1)
or set
to continuous mode. The 16-word burst mode is specially designed for cached processor designs to speed up
cache re-fill operations.
In NOR-Flash, burst mode read accesses are synchronous whereas write accesses are of asynchronous nature.
This is to retain compatibility to today’s NOR-Flash protocols and thus to make sure that existing baseband
designs do get instantly a performance gain in read direction by deploying the NOR-Flash burst protocol. The
different access protocols that are supported by the CellularRAM are illustrated in
Figure 1
. Data byte control (UB,
LB) is featured in all modes and provides dedicated lower and upper byte access.
Figure 1
CellularRAM - Interface Configuration Options
The CellularRAM can be operated from a single 1.8 V power supply feeding the core and the output drivers. The
chip is fabricated in Infineon Technologies advanced low power 0.14
μ
m process technology and comes in a
P-VFBGA-54 package.
1) 1 word is equal 16 bits
/CS
/WE
/OE
32Mb
CellularRAM
(FBGA-54)
SRAM I/F
Read:
Write:
Async/ Page
Async
Sync. Burst
Async w/ ADR Latch
Sync Burst
Sync Burst
32Mb
CellularRAM
(FBGA-54)
NOR-Flash I/F
32Mb
CellularRAM
(FBGA-54)
Sync. I/F
/CS
/WE
/OE
CLK
/ADV
WAIT
CLK
/ADV
WAIT
32Mb
CellularRAM
(FBGA-54)
/CS
/WE
/OE
/UB
/LB
CLK
/ADV
CRE
A20-A0
DQ15-DQ0
32Mb
CellularRAM
(FBGA-54)
/CS
/WE
/OE
/UB
/LB
CRE
A20-A0
DQ15-DQ0
WAIT
Asynchronous I/F
Sync. Burst I/F
& NOR-Flash Burst
& Asynchronous I/F
Pinning:
Protocols:
/CS
/WE
/OE
CLK=/ADV=Low and WAIT ignored in Asynchronous I/F
相關(guān)PDF資料
PDF描述
HYE18P32161AC-85 32M Asynchronous/Page CellularRAM
HYE18P32161AC 32M Asynchronous/Page CellularRAM
HYE18P32161ACL70 JT 23C 21#20 2#16 SKT PLUG
HYE18P32161ACL85 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
HYE18P32161AC-70 32M Asynchronous/Page CellularRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE18P32160AC-96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL125 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL15 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32161AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM
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