參數(shù)資料
型號(hào)： HYE18P32160AC-15
廠商： INFINEON TECHNOLOGIES AG
英文描述： M39012 MIL RF CONNECTOR
中文描述： 32M的同步突發(fā)的CellularRAM
文件頁(yè)數(shù)： 34/53頁(yè)
文件大?。?/td> 1426K
代理商： HYE18P32160AC-15
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
Data Sheet
34
V2.0, 2003-12-16
2.6.3
Writing to the device in asynchronous SRAM mode is accomplished by asserting the Chip Select (CS) and Write
Enable (WE) signals to low. ADV can be used to latch the address (refer to
“Asynchronous Write with Address
Latch (ADV) Control” on Page 40
for details) or simply held low for entire write operation. If the Upper Byte (UB)
control line is set active low then the upper word (DQ15 to DQ8) of the data bus is written to the specified memory
location. If the Lower Byte (LB) control line is set active low then the lower word (DQ7 to DQ0) of the data bus is
written to the specified memory location. Write operation takes place when either one or both UB and LB is
asserted low. The data is latched by the rising edge of either CS, WE, or UB/LB whichever signal comes first.
Asynchronous Write
Figure 16
Asynchronous Write - WE Controlled (OE =
V
IH
or
V
IL
, CRE =
V
IL
)
Figure 17
Asynchronous Write - CS Controlled (OE =
V
IH
or
V
IL
, CRE =
V
IL
)
Don't Care
A20-A0
ADDRESS
CS
WE
UB, LB
DQx IN
t
CW
t
WR
t
WC
t
WP
t
AW
t
BW
Data Valid
DQx OUT
t
DW
t
DH
t
AS
t
WHZ
t
OW
ADV
t
VPH
t
VS
t
WPH
Don't Care
A20-A0
ADDRESS
CS
WE
UB, LB
DQx OUT
t
CW
t
WC
t
AS
t
WP
t
DW
t
DH
t
BW
Data In Valid
DQx IN
High-Z
t
LZ,
t
BLZ
t
WHZ
ADV
t
CPH
t
WR
t
AW
t
VPH
t
VS
相關(guān)PDF資料
PDF描述
HYE18P32161AC-85 32M Asynchronous/Page CellularRAM
HYE18P32161AC 32M Asynchronous/Page CellularRAM
HYE18P32161ACL70 JT 23C 21#20 2#16 SKT PLUG
HYE18P32161ACL85 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
HYE18P32161AC-70 32M Asynchronous/Page CellularRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE18P32160AC-96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL125 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL15 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32161AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*