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參數(shù)資料
| 型號： | HYB18L128160BC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | BJAWBMSpecialty DRAMs Mobile-RAM |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 43/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BC-7.5 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
43
V1.4, 2004-04-30
Figure 46
Power Down Entry and Exit
2.4.10.1
The deep power down mode is an unique function on Low Power SDRAM devices with extremely low current
consumption. Deep power down mode is entered using the BURST TERMINATE command (cf.
Figure 35
) except
that CKE is LOW. All internal voltage generators inside the device are stopped and all memory data is lost in this
mode. To enter the deep power down mode all banks must be precharged.
The deep power down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command
sequence as for power-up initialization, including the 200μs initial pause, has to be applied before any other
command may be issued (cf.
Figure 3
and
Figure 4
).
DEEP POWER DOWN
2.5
Function Truth Tables
Table 14
Current State
Any
Current State Bank n - Command to Bank n
CS
RAS CAS
H
X
X
L
H
H
L
L
H
L
L
L
L
L
L
L
L
H
L
H
L
L
H
L
L
L
H
L
H
L
L
H
L
L
L
H
L
H
H
WE
X
H
H
H
L
L
H
L
L
H
L
L
L
Command / Action
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
MODE REGISTER SET
PRECHARGE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate READ burst, start precharge)
BURST TERMINATE
Notes
1)2)3)4)5)6)
1) to 6)
Idle
1) to 6)
1) to 7)
1) to 7)
1) to 6), 8)
Row Active
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
Read
(Auto-
Precharge
Disabled)
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
1) to 6), 11)
= Don't Care
Precharge Power Down mode shown: all banks are idle and tRP met
when Power Down Entry Command is issued
Any
Command
Power Down
Entry
t
RP
Exit from
Power Down
High-Z
DQ
A10 (AP)
Valid
Pre All
Address
Valid
Command
NOP
NOP
NOP
Valid
PRE
CKE
CLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
| HYB18RL25632AC-4 | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
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