參數(shù)資料
型號(hào)： HYB18L128160BC-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： BJAWBMSpecialty DRAMs Mobile-RAM
中文描述： BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁(yè)數(shù)： 40/53頁(yè)
文件大?。?/td> 1328K
代理商： HYB18L128160BC-7.5
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
40
V1.4, 2004-04-30
2.4.9
The
Mobile-RAM
requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways:
by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
AUTO REFRESH and SELF REFRESH
2.4.9.1
AUTO REFRESH
Figure 41
AUTO REFRESH Command
Auto Refresh is used during normal operation of the
Mobile-RAM
. The command is nonpersistent, so it must be
issued each time a refresh is required. A minimum row cycle time (
t
RC
) is required between two AUTO REFRESH
commands. The same rule applies to any access command after the Auto Refresh operation. All banks must be
precharged prior to the AUTO REFRESH command.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care”
during an AUTO REFRESH command. The
Mobile-RAM
requires Auto Refresh cycles at an average periodic
interval of 15.6
μ
s (max.). Partial Array mode has no influence on Auto Refresh mode.
Figure 42
Auto Refresh
= Don't Care
CS
CKE
(High)
CLK
A0-A11
BA0,BA1
CAS
WE
RAS
Ba A, Row n = bank A, row n
t
RP
t
RC
t
RC
= Don't Care
DQ
High-Z
A10 (AP)
Row n
Pre All
Address
Ba A,
Row n
Command
NOP
ARF
NOP
NOP
NOP
NOP
PRE
ARF
ACT
CLK
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