參數(shù)資料
型號(hào)： HYB18L128160BC-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： BJAWBMSpecialty DRAMs Mobile-RAM
中文描述： BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁(yè)數(shù)： 20/53頁(yè)
文件大?。?/td> 1328K
代理商： HYB18L128160BC-7.5
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
20
V1.4, 2004-04-30
2.4.4
ACTIVE
Figure 9
ACTIVE Command
Before any READ or WRITE commands can be issued to a bank within the
Mobile-RAM
, a row in that bank must
be “opened” (activated). This is accomplished via the ACTIVE command and addresses A0 - A11, BA0 and BA1
(see
Figure 9
), which decode and select both the bank and the row to be activated. After opening a row (issuing
an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the
t
RCD
specification.
A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active
row has been “closed” (precharged).
The minimum time interval between successive ACTIVE commands to the same bank is defined by
t
RC
. A
subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands
to different banks is defined by
t
RRD
.
Figure 10
Bank Activate Timings
= Don't Care
BA = Bank Address
RA = Row Address
BA0,BA1
BA
A0-A11
RA
WE
CAS
RAS
CS
CKE
(High)
CLK
t
RRD
t
RCD
= Don't Care
CLK
RD/WR
NOP
NOP
NOP
ACT
NOP
ACT
Command
ROW
ROW
COL
A0-A11
BA x
BA y
BA y
BA0, BA1
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