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參數(shù)資料
| 型號： | HYB18L128160BC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | BJAWBMSpecialty DRAMs Mobile-RAM |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 15/53頁 |
| 文件大小： | 1328K |
| 代理商： | HYB18L128160BC-7.5 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
15
V1.4, 2004-04-30
2.2.1.7
Temperature Compensated Self Refresh (TCSR) with On-Chip Temperature
Sensor
DRAM devices store data as electrical charge in tiny capacitors that require a periodic refresh in order to retain
the stored information. This refresh requirement heavily depends on the die temperature: high temperatures
correspond to short refresh periods, and low temperatures correspond to long refresh periods.
The Mobile-RAM is equipped with an on-chip temperature sensor which continuously senses the actual die
temperature and adjusts the refresh period in Self Refresh mode accordingly. This makes any programming of the
TCSR bits in the Extended Mode Register obsolete. It also is the superior solution in terms of compatibility and
power-saving, because
it is fully compatible to all processors that do not support the Extended Mode Register
it is fully compatible to all applications that only write a default (worst case) TCSR value, e.g. because of the
lack of an external temperature sensor
it does not require any processor interaction for regular TCSR updates
2.2.1.8
The drive strength of the DQ output buffers is selectable via bits A5 and A6. The default value (“half drive strength”)
is suitable for typical applications of a Mobile-RAM. For heavier loaded systems, a stronger output buffer (“full drive
strength”) is available.
I
-
V
curves for the full drive strength and half drive strength are included in this document.
Selectable Drive Strength
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
| HYB18RL25632AC-4 | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
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