- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370738 > HY29LV400 4M(X8/X16)|3.0V|55|NOR FLASH - 4M PDF資料下載
參數(shù)資料
| 型號： | HY29LV400 |
| 英文描述： | 4M(X8/X16)|3.0V|55|NOR FLASH - 4M |
| 中文描述： | 4分（X8/X16）| 3.0V | 55 | NOR閃存- 4分 |
| 文件頁數(shù)： | 15/40頁 |
| 文件大小： | 550K |
| 代理商： | HY29LV400 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
15
Rev. 1.0/Nov. 01
HY29LV400
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sec-
tor erase time-out of 50 μs (min), measured from
the rising edge of the final WE# pulse in that bus
cycle, begins. During this time-out window, an ad-
ditional sector erase data cycle, specifying the
sector address of another sector to be erased, may
be written into an internal sector erase buffer. This
buffer may be loaded in any sequence, and the
number of sectors specified may be from one sec-
tor to all sectors. The only restriction is that the
time between these additional data cycles must
be less than 50 μs, otherwise erasure may begin
before the last data cycle is accepted. To ensure
that all data cycles are accepted, it is recom-
mended that host processor interrupts be disabled
during the time that the additional cycles are be-
ing issued and then be re-enabled afterwards.
If all sectors specified for erasing are protected,
the device returns to reading array data after ap-
proximately 100 μs. If at least one specified sec-
tor is not protected, the erase operation erases
Figure 6. Sector Erase Procedure
the unprotected sectors, and ignores the command
for the sectors that are protected.
The system can monitor DQ[3] to determine if the
50 μs sector erase time-out has expired, as de-
scribed in the Write Operation Status section. If
the time between additional sector erase data
cycles can be insured to be less than the time-
out, the system need not monitor DQ[3].
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
then rewrite the command sequence, including any
additional sector erase data cycles. Once the sec-
tor erase operation itself has begun, only the Erase
Suspend command is valid. All other commands
are ignored.
As for the Chip Erase command, note that a hard-
ware reset immediately terminates the sector
erase operation. To ensure data integrity, the
aborted Sector Erase command sequence should
be reissued once the reset operation is complete.
When the Automatic Erase algorithm terminates,
the device returns to the array Read mode. Sev-
eral methods are provided to allow the host to de-
termine the status of the erase operation, as de-
scribed in the Write Operation Status section.
START
YES
Erase An
Additional Sector
Check Erase Status
(See Write Operation Status
Section)
Setup First (or Next) Sector
Address for Erase Operation
ERASE COMPLETE
Write First Five Cycles of
SECTOR ERASE
Command Sequence
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sector Erase
Time-out (DQ[3])
Expired
NO
YES
NO
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY3-9574A-9 | Analog-to-Digital Converter??? 12-Bit |
| HY3-9574B-9 | Analog-to-Digital Converter??? 12-Bit |
| HY3-9574J-5 | Analog-to-Digital Converter??? 12-Bit |
| HY3-9574K-5 | Analog-to-Digital Converter??? 12-Bit |
| HY-9574 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV400BF55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。