參數(shù)資料
型號： HN29W6484DH08TE
廠商： Hitachi,Ltd.
英文描述： Controller for AND Flash Memory(AND型閃速存儲器控制器)
中文描述： 控制器及快閃記憶體（及型閃速存儲器控制器）
文件頁數(shù)： 7/74頁
文件大?。?/td> 251K
代理商： HN29W6484DH08TE
HN29W6484DH08TE-1
7
Host Interface Pin Explanation
Signal name
Direction Pin No.
Description
A10 to A0
(PC Card Memory mode)
I
100, 107, 108,
109, 110, 118,
119, 120, 1, 6, 7
Address bus is A10 to A0. A10 is MSB and A0 is
LSB.
A10 to A0
(PC Card I/O mode)
A2 to A0
(True IDE mode)
1, 6, 7
Address bus is A10 to A0. Only A2 to A0 are used,
A10 to A3 should be grounded by the host.
BVD1
(PC Card Memory mode)
I/O
5
BVD1 outputs the battery voltage status in the card.
This output line is constantly driven to a high state
since a battery is not required for this product.
-STSCHG
(PC Card I/O mode)
-STSCHG is used for changing the status of
Configuration and status register in attribute area.
-PDIAG
(True IDE mode)
-PDIAG is the Pass Diagnostic signal in Master/Slave
handshake protocol.
BVD2
(PC Card Memory mode)
I/O
4
BVD2 outputs the battery voltage status in the card.
This output line is constantly driven to a high state
since a battery is not required for this product.
-SPKR
(PC Card I/O mode)
-SPKR outputs speaker signals. This output line is
constantly driven to a high state since this product
does not support the audio function.
-DASP
(True IDE mode)
-DASP is the Disk Active/Slave Present signal in the
Master/Slave handshake protocol.
-CE1, -CE2
(PC Card Memory mode)
Card Enable
I
99, 103
-CE1 and -CE2 are low active card select signals.
Byte/Word/Odd byte mode are defined by combination
of -CE1, -CE2 and A0.
-CE1, -CE2
(PC Card I/O mode)
Card Enable
-CE1, -CE2
(True IDE mode)
-CE2 is used for select the Alternate Status Register
and the Device Control Register while -CE1 is the chip
select for the other task file registers.
相關PDF資料
PDF描述
HN29WB800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WT800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN462532 4096-word X 8-bit UV Erasable and Programmable Read Only Memory
HN462716 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462716G 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
HN29W64AH05TE-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
HN29W8411SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM
HN29WB800 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800FP-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WB800FP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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