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參數(shù)資料
| 型號： | HAL805UT-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Programmable Linear Hall Effect Sensor |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | PLASTIC, TO-92UT, 3 PIN |
| 文件頁數(shù)： | 23/24頁 |
| 文件大?。?/td> | 373K |
| 代理商： | HAL805UT-E |
PRELIMINARY DATA SHEET
HAL805
Micronas
23
5.5. Register Information
CLAMP-LOW
–
The register range is from 0 up to 1023.
–
The register value is calculated by:
CLAMP-HIGH
–
The register range is from 0 up to 2047.
–
The register value is calculated by:
VOQ
–
The register range is from
1024 up to 1023.
–
The register value is calculated by:
SENSITIVITY
–
The register range is from
8192 up to 8191.
–
The register value is calculated by:
TC and TCSQ
–
The TC register range is from
31 up to 31.
–
The TCSQ register range is from 0 up to 31.
Please refer Section 4.2. on page 17 for the recom-
mended values.
MODE
–
The register range is from 0 up to 63 and contains
the settings for FILTER and RANGE:
Please refer Section 2.2. on page 7 for the available
FILTER and RANGE values.
ADC-READOUT
–
This register is read only.
–
The register range is from
8192 up to 8191.
DEACTIVATE
–
This register can only be written.
–
The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
–
The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
5.6. Programming Information
If the content of any register (except the lock registers)
is to be changed, the desired value must first be writ-
ten into the corresponding RAM register. Before read-
ing out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.
If all HAL 805 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
Low Clamping Voltage
V
DD
* 2048
CLAMP-LOW =
High Clamping Voltage
V
DD
* 2048
CLAMP-HIGH =
V
OQ
V
DD
* 1024
VOQ =
Sensitivity
2048
SENSITIVITY =
MODE = FILTER * 8 + RANGE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAL805UT-K | Programmable Linear Hall Effect Sensor |
| HAL815 | Programmable Linear Hall Sensor |
| HAL815A | Programmable Linear Hall Sensor |
| HAL815E | Programmable Linear Hall Sensor |
| HAL815K | Programmable Linear Hall Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAL805UT-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL810 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL815 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Sensor |
| HAL815_1 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL815A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Sensor |
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