參數(shù)資料
型號: HAL805UT-E
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 磁阻傳感器
英文描述: Programmable Linear Hall Effect Sensor
中文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT
封裝: PLASTIC, TO-92UT, 3 PIN
文件頁數(shù): 20/24頁
文件大?。?/td> 373K
代理商: HAL805UT-E
HAL805
PRELIMINARY DATA SHEET
20
Micronas
Fig. 5
2:
Telegram for coding a Write command
Fig. 5
3:
Telegram for coding a Read command
Fig. 5
4:
Telegram for coding the EEPROM programming
Fig. 5
5:
Activate pulse
t
rp
Rise time of programming voltage
1
0.2
0.5
1
ms
t
fp
Fall time of programming voltage
1
0
1
ms
t
w
Delay time of programming voltage
after Acknowledge
1
0.5
0.7
1
ms
V
act
Voltage for an Activate pulse
3
3
4
5
V
t
act
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Table 5
1:
Telegram parameters, continued
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
Sync
COM
CP
ADR
AP
DAT
DP
Acknowledge
V
DD
V
OUT
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
Acknowledge
V
DD
V
OUT
READ
Sync
COM
CP
ADR
AP
t
PROG
Acknowledge
V
DD
V
OUT
ERASE, PROM, LOCK, and LOCKI
t
rp
t
fp
t
w
V
DDPROG
t
ACT
V
OUT
t
r
t
f
V
ACT
相關(guān)PDF資料
PDF描述
HAL805UT-K Programmable Linear Hall Effect Sensor
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