參數(shù)資料
型號: HAL805UT-E
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 磁阻傳感器
英文描述: Programmable Linear Hall Effect Sensor
中文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT
封裝: PLASTIC, TO-92UT, 3 PIN
文件頁數(shù): 14/24頁
文件大小: 373K
代理商: HAL805UT-E
HAL805
PRELIMINARY DATA SHEET
14
Micronas
3.7. Magnetic Characteristics
at T
J
=
40
°
C to +170
°
C, V
DD
= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25
°
C and V
DD
= 5 V.
3.8. Open Circuit Detection
at T
J
=
40
°
C to +170
°
C, Typical Characteristics for T
J
= 25
°
C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
B
Offset
Magnetic Offset
3
1
0
1
mT
B = 0 mT, I
OUT
= 0 mA, T
J
= 25
°
C
B
Offset
/
T
Magnetic Offset Change
due to T
J
15
0
15
μ
T/K
B = 0 mT, I
OUT
= 0 mA
B
Hysteresis
Magnetic Hysteresis
20
0
20
μ
T
Range = 30 mT, Filter = 500 Hz
SR
Magnetic Slew Rate
3
2
4
12
25
50
mT/ms
Filter frequency = 80 Hz
Filter frequency = 160 Hz
Filter frequency = 500 Hz
Filter frequency = 1 kHz
Filter frequency = 2 kHz
n
meff
Magnetic RMS Broadband
Noise
3
10
μ
T
BW = 10 Hz to 2 kHz
f
Cflicker
Corner Frequency of 1/f Noise
3
20
Hz
B = 0 mT
f
Cflicker
Corner Frequency of 1/frms
Noise
3
100
Hz
B = 65 mT, T
J
= 25
°
C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
OUT
Output voltage
at open V
DD
line
3
0
0
0.2
V
V
DD
= 5 V
R
L
= 10 k
to GND
V
OUT
Output voltage at
open GND line
3
4.7
4.8
5
V
V
DD
= 5 V
R
L
= 10 k
to GND
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