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| 型號(hào)： | HAL805UT-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Programmable Linear Hall Effect Sensor |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | PLASTIC, TO-92UT, 3 PIN |
| 文件頁數(shù)： | 17/24頁 |
| 文件大?。?/td> | 373K |
| 代理商： | HAL805UT-E |
PRELIMINARY DATA SHEET
HAL805
Micronas
17
4. Application Notes
4.1. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
In addition, the input of the controller unit should be
pulled-down with a 4.7 kOhm resistor and a ceramic
4.7 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
V
DD
line at this time must be able to resist this voltage.
Fig. 4
–
1:
Recommended application circuit
4.2. Use of two HAL 805 in Parallel
Two different HAL 805 sensors which are operated in
parallel to the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are inacti-
vated by the
“
Deactivate
”
command on the common
supply line. Then, the appropriate IC is activated by an
“
Activate
”
pulse on its output. Only the activated sen-
sor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the
“
Deactivate
”
command is sent again, and the sec-
ond IC can be selected.
Fig. 4
–
2:
Parallel operation of two HAL 805
4.3. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact MICRONAS for more detailed informa-
tion on this higher order temperature compensation.
The HAL 800 and HAL 805 contain the same tempera-
ture compensation circuits. If an optimal setting for the
HAL 800 is already available, the same settings may
be used for the HAL 805.
OUT
V
DD
GND
4.7 nF
HAL805
4.7 k
μ
C
4.7 nF
4.7 nF
HAL 805
Sensor B
GND
10 nF
HAL 805
Sensor A
4.7 nF
4.7 nF
V
DD
OUT B & Select B
OUT A & Select A
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
400
31
6
300
28
7
200
24
8
100
21
9
0
18
10
50
17
10
90
16
11
130
15
11
170
14
11
200
13
12
240
12
12
280
11
12
320
10
13
360
9
13
410
8
13
450
7
13
500
6
14
550
5
14
600
4
14
650
3
14
700
2
15
750
1
15
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| HAL805UT-K | Programmable Linear Hall Effect Sensor |
| HAL815 | Programmable Linear Hall Sensor |
| HAL815A | Programmable Linear Hall Sensor |
| HAL815E | Programmable Linear Hall Sensor |
| HAL815K | Programmable Linear Hall Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HAL805UT-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL810 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL815 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Sensor |
| HAL815_1 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL815A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Sensor |
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