參數(shù)資料
型號(hào): GS8342D08E-333T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù): 14/37頁(yè)
文件大?。?/td> 1668K
代理商: GS8342D08E-333T
Preliminary
GS8342D08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 8/2005
21/37
2003, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units Notes
Output High Voltage
VOH1
VDDQ/2 – 0.12 VDDQ/2 + 0.12
V
1, 3
Output Low Voltage
VOL1
VDDQ/2 – 0.12 VDDQ/2 + 0.12
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1.
IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175 ≤ RQ ≤ 350).
2.
IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175 ≤ RQ ≤ 350).
3. Parameter tested with RQ = 250
and VDDQ = 1.5 V or 1.8 V
4. Minimum Impedance mode, ZQ = VSS
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-333
-300
-250
-200
-167
Notes
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating Current (x36): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
960
mA
980
mA
900
mA
920
mA
800
mA
820
mA
670
mA
690
mA
590
mA
610
mA
2, 3
Operating Current (x18): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
900
mA
920
mA
840
mA
860
mA
740
mA
760
mA
620
mA
640
mA
550
mA
570
mA
2, 3
Operating Current (x9): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
900
mA
920
mA
840
mA
860
mA
740
mA
760
mA
620
mA
640
mA
550
mA
570
mA
2, 3
Operating Current (x8): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
900
mA
920
mA
840
mA
860
mA
740
mA
760
mA
620
mA
640
mA
550
mA
570
mA
2, 3
Standby Current (NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
0.2 V or ≥ V
DD – 0.2 V
350
mA
360
mA
330
mA
340
mA
300
mA
310
mA
280
mA
290
mA
260
mA
270
mA
2, 4
Notes:
1.
Power measured with output pins floating.
2.
Minimum cycle, IOUT = 0 mA
3.
Operating current is calculated with 50% read cycles and 50% write cycles.
4.
Standby Current is only after all pending read and write burst operations are completed.
相關(guān)PDF資料
PDF描述
GS8342Q08AE-278 4M X 8 DDR SRAM, 0.45 ns, PBGA165
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
GS840E18AGT-150T 256K X 18 CACHE SRAM, 10 ns, PQFP100
GS840E18AT-166IT 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
GS840F36AGT-10T 128K X 36 CACHE SRAM, 10 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8342D08GE-400 制造商:GSI Technology 功能描述:4M X 8 (36 MEG) SIGMAQUAD II -SEPERATE I/O BURST OF 4 - Trays
GS8342D09AE-167 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.5NS 165FPBGA - Trays
GS8342D09AE-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FPBGA - Trays
GS8342D09AE-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FPBGA - Trays
GS8342D09AE-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FPBGA - Trays