參數(shù)資料
型號(hào)： GS832472GC-150I
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K X 72 CACHE SRAM, 10 ns, PBGA209
封裝： 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁(yè)數(shù)： 5/46頁(yè)
文件大小： 1126K
代理商： GS832472GC-150I
Rev: 1.00 10/2001
13/46
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Note:
There are pull-up devices on the ZQ, SCD and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Enable / Disable Parity I/O Pins
This SRAM allows the user to configure the device to operate in Parity I/O active (x18, x36, or x72) or in Parity I/O inactive (x16,
x32, or x64) mode. Holding the PE bump low or letting it float will activate the 9th I/O on each byte of the RAM. Grounding PE
deactivates the 9th I/O of each byte, although the bit in each byte of the memory array remains active to store and recall parity bits
generated and read into the ByteSafe parity circuits.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
SCD
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
Interleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料
PDF描述
GS832472GC-250T 512K X 72 CACHE SRAM, 6 ns, PBGA209
GS8342D08E-333T 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
GS8342Q08AE-278 4M X 8 DDR SRAM, 0.45 ns, PBGA165
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
GS840E18AGT-150T 256K X 18 CACHE SRAM, 10 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
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GS8324Z36B-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS8324Z72C200 制造商:G.S.I. 功能描述:
GS8342D06BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
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