參數(shù)資料
型號(hào)： GS832472GC-150I
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K X 72 CACHE SRAM, 10 ns, PBGA209
封裝： 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù)： 14/46頁
文件大?。?/td> 1126K
代理商： GS832472GC-150I
Rev: 1.00 10/2001
21/46
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Note: These parameters are sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–
40
25
85
°C
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
6.5
7.5
pF
Input/Output Capacitance (x36/x72)
CI/O
VOUT = 0 V
6
7
pF
Input/Output Capacitance (x18)
CI/O
VOUT = 0 V
8.5
9.5
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
9
°C/W
3
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
相關(guān)PDF資料
PDF描述
GS832472GC-250T 512K X 72 CACHE SRAM, 6 ns, PBGA209
GS8342D08E-333T 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
GS8342Q08AE-278 4M X 8 DDR SRAM, 0.45 ns, PBGA165
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
GS840E18AGT-150T 256K X 18 CACHE SRAM, 10 ns, PQFP100
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GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
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