參數(shù)資料
型號: GS8321E18AD-333IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: CACHE SRAM, PBGA165
封裝: FPBGA-165
文件頁數(shù): 3/32頁
文件大?。?/td> 736K
代理商: GS8321E18AD-333IT
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
GS8321E18/32/36AD-400/375/333/250/200/150
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2011
11/32
2010, GSI Technology
Preliminary
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS832236AB-150VT 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
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GS8342D11BD-500 4M X 9 QDR SRAM, 0.45 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321E18AD-375 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8321E18AGD-375 制造商:GSI Technology 功能描述:165 FPBGA - Bulk
GS8321E18AGD-375I 制造商:GSI Technology 功能描述:165 FPBGA - Bulk
GS8321E18E 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321E18E-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs