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參數(shù)資料
| 型號： | GS820V32GQ-5 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | QFP-100 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 200K |
| 代理商： | GS820V32GQ-5 |
Rev. 9/09/97
8/15
64K x 32 Burst
GS820V32Q/T
4/5/6, 2.5V I/O, 2.0mA
80-133MHz (P/L)
66MHz Flow-Thru
G S I T E C H N O L O G Y
GS820V32Q/T
AC Electrical Characteristics
(VDD=3.135V to 3.465V, Ta=0 to 70oC)
Note:
1. Flow-Thru mode is available in -4 bin only
2. These parameters are sampled and are not 100% tested
3. ZZ is a asynchronous signal. However, in order to be recognized on any given clock cycle, the signal must meet specified setup
and hold time.
Parameter
Symbol
-4
-5
-6
Unit
Min Max Min Max Min Max
Pipeline
Clock to output valid
tKQ
---
4.5
---
5
---
6
ns
Clock to output invalid
tKQX
2
---
2
---
2
---
ns
Clock to output in Low-Z
tLZ
2
---
2
---
2
---
ns
Clock cycle time
tKC
8.5
---
10
---
12.5
---
ns
Flow-Thru
Clock to output valid
tKQ
---
12
NA1
ns
Clock to output invalid
tKQX
3
---
ns
Clock to output in Low-Z
tLZ
2
3
---
ns
Clock cycle time
tKC
15
---
ns
Clock high time
tKH
2
---
3
---
4
---
ns
Clock low time
tKL
2
---
3
---
4
---
ns
Clock to output in Hi-Z
tHZ
2
---
4
---
5
---
6
ns
OE to output valid
tOE
---
4
---
5
---
6
ns
OE to output in Low-Z
tOLZ
2
0
---
0
---
0
---
ns
OE to output in Hi-Z
tOHZ
2
---
4
---
5
---
6
ns
Setup time
tS
2.0
---
2.5
---
2.5
---
ns
Hold time
tH
0.5
---
0.5
---
0.5
---
ns
ZZ setup time
tZZS
3
5
---
5
---
5
---
ns
ZZ hold time
tZZH
3
1
---
1
---
1
---
ns
ZZ recovery
tZZR
20
---
20
---
20
---
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS820V32Q | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 Burst |
| GS820V32Q4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| GS820V32Q4I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| GS820V32Q5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| GS820V32Q5I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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