參數(shù)資料
型號(hào)： GS8161Z18DT-200T
廠商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù)： 10/38頁(yè)
文件大?。?/td> 283K
代理商： GS8161Z18DT-200T
GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
18/38
2011, GSI Technology
Preliminary
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–
0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–
0.5 to 4.6
V
VI/O
Voltage on I/O Pins
–
0.5 to VDDQ +0.5 ( 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–
0.5 to VDD +0.5 ( 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–
55 to 125
oC
TBIAS
Temperature Under Bias
–
55 to 125
oC
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
VDD3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input High Voltage
VIH
2.0
—
VDD + 0.3
V
Input Low Voltage
VIL
–
0.3
—
0.8
V
Note:
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
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