參數(shù)資料
型號: GS8161E18GT-166I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 7 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 30/36頁
文件大?。?/td> 935K
代理商: GS8161E18GT-166I
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.14 3/2005
36/36
1999, GSI Technology
8161E18_r2_09;
8161E18_r2_10
Content
Updated table on page 1
Created recommended operating conditions tables on pages
11 and 12
Updated AC Electrical Characteristics table
Added Sleep mode description on page 22
Updated Ordering Information for 225 MHz part (changed
from 7ns to 6.5 ns)
Updated BSR table (2 and 3 changed to X (value undefined))
Added 250 MHz speed bin
Deleted 180 MHz speed bin
8161E18_r2_10;
8161E18_r2_11
Content
Updated AC Characteristics table
Updated FT power numbers
Updated Mb references from 16Mb to 18Mb
Removed ByteSafe references
Changed DP and QE pins to NC
Updated ZZ recovery time diagram
Updated AC Test Conditions table and removed Output Load
2 diagram
8161E18_r2_11;
8161E18_r2_12
Content
Removed Preliminary banner
Removed BSR table
Removed pin locations from pin description table
8161E18_r2_12;
8161E18_r2_13
Format/Content
Updated format
Updated timing diagrams
Added 165 BGA
8161E18_r2_13;
8161E18_r2_14
Content
Corrected Bump N6 on all 165 BGA pinouts (from NC to A)
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
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GS8161E18T-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs