參數(shù)資料
型號: GS8161E18GT-166I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 7 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 27/36頁
文件大?。?/td> 935K
代理商: GS8161E18GT-166I
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.14 3/2005
33/36
1999, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Package
Speed2
(MHz/ns)
TA3
Status
1M x 18
GS8161E18T-250
DCD Pipeline/Flow Through
TQFP
250/5.5
C
1M x 18
GS8161E18T-225
DCD Pipeline/Flow Through
TQFP
225/6
C
1M x 18
GS8161E18T-200
DCD Pipeline/Flow Through
TQFP
200/6.5
C
1M x 18
GS8161E18T-166
DCD Pipeline/Flow Through
TQFP
166/7
C
1M x 18
GS8161E18T-150
DCD Pipeline/Flow Through
TQFP
150/7.5
C
1M x 18
GS8161E18T-133
DCD Pipeline/Flow Through
TQFP
133/8.5
C
512K x 36
GS8161E36T-250
DCD Pipeline/Flow Through
TQFP
250/5.5
C
512K x 36
GS8161E36T-225
DCD Pipeline/Flow Through
TQFP
225/6
C
512K x 36
GS8161E3T-200
DCD Pipeline/Flow Through
TQFP
200/6.5
C
512K x 36
GS8161E36T-166
DCD Pipeline/Flow Through
TQFP
166/7
C
512K x 36
GS8161E36T-150
DCD Pipeline/Flow Through
TQFP
150/7.5
C
512K x 36
GS8161E36T-133
DCD Pipeline/Flow Through
TQFP
133/8.5
C
1M x 18
GS8161E18T-250I
DCD Pipeline/Flow Through
TQFP
250/5.5
I
1M x 18
GS8161E18T-225I
DCD Pipeline/Flow Through
TQFP
225/6
I
1M x 18
GS8161E18T-200I
DCD Pipeline/Flow Through
TQFP
200/6.5
I
1M x 18
GS8161E18T-166I
DCD Pipeline/Flow Through
TQFP
166/7
I
1M x 18
GS8161E18T-150I
DCD Pipeline/Flow Through
TQFP
150/7.5
I
1M x 18
GS8161E18T-133I
DCD Pipeline/Flow Through
TQFP
133/8.5
I
512K x 36
GS8161E36T-250I
DCD Pipeline/Flow Through
TQFP
250/5.5
I
512K x 36
GS8161E36T-225I
DCD Pipeline/Flow Through
TQFP
225/6
I
512K x 36
GS8161E36T-200I
DCD Pipeline/Flow Through
TQFP
200/6.5
I
512K x 36
GS8161E36T-166I
DCD Pipeline/Flow Through
TQFP
166/7
I
512K x 36
GS8161E36T-150I
DCD Pipeline/Flow Through
TQFP
150/7.5
I
512K x 36
GS8161E36T-133I
DCD Pipeline/Flow Through
TQFP
133/8.5
I
1M x 18
GS8161E18D-250
DCD Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
C
1M x 18
GS8161E18D-225
DCD Pipeline/Flow Through
165 BGA (var. 1)
225/6
C
1M x 18
GS8161E18D-200
DCD Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
C
1M x 18
GS8161E18D-166
DCD Pipeline/Flow Through
165 BGA (var. 1)
166/7
C
1M x 18
GS8161E18D-150
DCD Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
C
1M x 18
GS8161E18D-133
DCD Pipeline/Flow Through
165 BGA (var. 1)
133/8.5
C
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816118D-133IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相關(guān)PDF資料
PDF描述
GS8162V18AGB-350I 1M X 18 CACHE SRAM, 4.5 ns, PBGA119
GS8162Z72CGC-250IVT 256K X 72 ZBT SRAM, 5.5 ns, PBGA209
GS8162ZV36AGD-350I 512K X 36 ZBT SRAM, 4.5 ns, PBGA165
GS82032GQ-150IT 64K X 32 CACHE SRAM, 9 ns, PQFP100
GS820V32GQ-5 64K X 32 CACHE SRAM, 5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18T-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs