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參數(shù)資料
| 型號： | GS8161E18GT-166I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 29/36頁 |
| 文件大小： | 935K |
| 代理商： | GS8161E18GT-166I |
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GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.14 3/2005
35/36
1999, GSI Technology
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS8161E18T-150IT 1.00 9/
1999A;GS8161E18T-150IT
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
GS8161E18T 2.01 1/
2000C;GS8161E18 T 2.02 1/
2000D
Changed pin description in TQFP to match order of pins in
pinout.
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
GS18/3662.03 2/2000E;
8161E18_r2_04
Content
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 15 from 20 ns to 100 ns
8161E18_r2_04;
8161E18_r2_05
Content/Format
Added 225 MHz speed bin
Updated numbers in page 1 table, AC Characteristics table,
and Operating Currents table
Updated format to comply with Technical Publications
standards
8161E18_r2_05;
8161E18_r2_06
Content
Updated Capitance table—removed Input row and changed
Output row to I/O
8161E18_r2_06;
8161E18_r2_07
Content
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 6
8161E18_r2_07;
8161E18_r2_08
Content
Added 3.3 V references to entire document
Updated Operating Conditions table
Updated JTAG section
Updated Boundary Scan Chain table
Added Pin 56 to Pin Description table
Updated Operating Currents table and added note
Updated Application Tips paragraph
Updated table on page 1; added power numbers
8161E18_r2_08;
8161E18_r2_09
Content
Updated Operating Currents table
Updated Synchronous Truth Table
Updated table on page 1; updated power numbers
Updated Recommended Operating Conditions table (added
VDDQ references)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161E18T-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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