參數(shù)資料
型號: FDS5672
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel PowerTrench MOSFET
中文描述: 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 5/12頁
文件大?。?/td> 455K
代理商: FDS5672
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
www.fairchildsemi.com
F
N
5
Figure 5.
0.1
1
10
100
400
0.1
1
10
70
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1ms
100
μ
s
10ms
Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
1
10
50
10
1
0.1
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
Figure 7.
0
5
10
15
20
25
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
4.5
5.0
5.5
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
Transfer Characteristics
Figure 8. Saturation Characteristics
0
5
10
20
25
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0.4
0.6
0.8
1.0
15
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 4.5V
V
GS
= 6V
V
GS
= 10V
V
GS
= 5V
Figure 9.
5.0
7.5
10.0
12.5
15.0
0
3
6
9
12
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Drain to Source On Resistance vs Drain
Current
Figure 10.
Resistance vs Junction Temperature
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 12A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
T
C
= 25°C unless otherwise noted
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