參數(shù)資料
型號: FDS5672
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel PowerTrench MOSFET
中文描述: 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 3/12頁
文件大?。?/td> 455K
代理商: FDS5672
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
www.fairchildsemi.com
F
N
3
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 30V, I
D
= 12A
V
GS
= 10V, R
GS
= 9.1
-
-
-
-
-
-
-
50
-
-
-
-
64
ns
ns
ns
ns
ns
ns
13
20
35
14
-
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 12A
I
SD
= 6A
I
SD
=12A, dI
SD
/dt = 100A/
μ
s
I
SD
=12A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
39
40
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 22A, V
= 60V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
θ
JA
is measured with 1.0 in
copper on FR-4 board.
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