參數(shù)資料
型號(hào): FDS5672
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: N-Channel PowerTrench MOSFET
中文描述: 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 4/12頁
文件大?。?/td> 455K
代理商: FDS5672
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
www.fairchildsemi.com
F
N
4
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1.
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
Normalized Power Dissipation vs
Ambient Temperature
Figure 2.
0
3
6
9
12
15
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 10V
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 3.
0.001
0.01
0.1
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
0.5
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
Normalized Maximum Transient Thermal Impedance
Figure 4.
10
100
1100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
IN THIS REGION
V
GS
= 10V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
Peak Current Capability
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