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參數(shù)資料
| 型號： | FDS5672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 455K |
| 代理商： | FDS5672 |
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
www.fairchildsemi.com
F
N
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
C
= 25
o
C, V
GS
= 6V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
12
10
A
Figure 4
245
2.5
20
-55 to 150
A
E
AS
mJ
W
P
D
mW/
o
C
o
C
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case (Note 2)
Thermal Resistance Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS5672
Device
FDS5672
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 12A, V
GS
= 10V
I
D
= 10A, V
GS
= 6V,
I
D
= 12A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0088
0.012
0.010
0.014
-
0.016
0.023
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
2200
410
130
1.4
34
4.2
9.4
5.2
9.3
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 12A
I
g
= 1.0mA
45
5.5
-
-
-
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