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參數(shù)資料
| 型號(hào)： | F49L004BA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| 中文描述： | 4兆位（為512k × 8）3V時(shí)僅閃存的CMOS |
| 文件頁(yè)數(shù)： | 16/46頁(yè) |
| 文件大?。?/td> | 371K |
| 代理商： | F49L004BA |
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EFS T
preliminary
F49L004UA / F49L004BA
Elite Flash Storage Technology Inc.
Publication Date : Aug. 2003
Revision: 0.2 16/46
7.4 More Device Operations
Hardware Data Protection
The command sequence requirement of unlock cycles for
programming or erasing provides data protection against
inadvertent writes. In addition, the following hardware
data protection measures prevent accidental erasure or
programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than VLKO, the device does not accept
any write cycles. This protects data during V
CC
power-up
and power-down. The command register and all internal
program/erase circuits are disabled, and the device resets.
Subsequent writes are ignored until V
CC
is greater than
V
LKO
. The system must provide the proper signals to the
control pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on
OE
,
CE
or
WE
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE
= V
IL
,
CE
= V
IH
or
WE
= V
IH
. To initiate a write cycle,
CE
and
WE
must be a logical zero while
OE
is a logical one.
Power Supply Decoupling
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected
between
its V
CC
and GND.
Power-Up Sequence
The device powers up in the Read Mode. In addition, the
memory contents may only be altered after successful
completion of the predefined command sequences.
Power-Up Write Inhibit
If
WE
=
CE
= V
IL
and
OE
= V
IH
during power up, the
device does not accept commands on the rising edge of
WE
. The internal state machine is automatically reset to
reading array data on power-up.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49L004BA-70N | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90N | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
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