參數(shù)資料
型號(hào): ES29DL320
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
元件分類: FLASH
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4M×8/2M×16),3.0伏,CMOS,同時(shí)運(yùn)行閃存
文件頁(yè)數(shù): 41/59頁(yè)
文件大?。?/td> 791K
代理商: ES29DL320
ESI
41
Rev. 0E May 25, 2006
ES29DL320
Excel Semiconductor inc.
ADVANCED INFORMATION
AC CHARACTERISTICS
Table 16. Erase and Program Operations
Parameter
Description
70
90
Unit
JEDEC
Std.
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
6
us
Word
Typ
8
t
WHWH1
t
WHWH1
Accelerated Programming Operation, Word or Byte (Note 2)
Typ
4
us
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
t
VCS
Vcc Setup Time (Note 1)
Min
50
us
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
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