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參數(shù)資料
| 型號(hào)： | ES29DL320 |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 元件分類： | FLASH |
| 英文描述： | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4M×8/2M×16），3.0伏，CMOS，同時(shí)運(yùn)行閃存 |
| 文件頁(yè)數(shù)： | 25/59頁(yè) |
| 文件大小： | 791K |
| 代理商： | ES29DL320 |
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ESI
25
Rev. 0E May 25, 2006
ES29DL320
Excel Semiconductor inc.
ADVANCED INFORMATION
BYTE / WORD PROGRAM
The system may program the device by word or
byte, depending on the state of the
BYTE# pin
.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data
are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device auto-
matically provides internally generated program
pulses and verifies the programmed cell margin.
Table 9 shows the address and data requirements
for the byte program command sequence. Note that
the autoselect, commands related with the security
sector, and CFI modes are unavailable while a pro-
gramming operation is in progress.
Program Status Bits : DQ7, DQ6 or RY/BY#
When the Embedded Program algorithm is com-
plete, that bank then returns to the read mode and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to the Write
Operation Status section Table 10 for information on
these status bits.
Any Commands Ignored during Program-
ming Operation
Any commands written to the device during the
Embedded Program algorithm are ignored. Note that
a hardware reset can immediately terminates the
program
operation.
The
sequence should be reinitiated once that bank has
returned to the read mode, to ensure data integrity.
program
command
Programming from “0” back to “1”
Programming is allowed in any sequence and
across sector boundaries. But a bit cannot be pro-
grammed from “0” back to a ”1”. Attempting to do so
may cause that bank to set DQ5 = 1, or cause the
DQ7 and DQ6 status bits to indicate the operation
was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations
can convert a “0” to a “1”.
Unlock Bypass
In the ES29DL320 device, an unlock bypass pro-
gram mode is provided for faster programming oper-
ation. In this mode, two cycles of program command
sequences can be saved. To enter this mode, an
unlock bypass enter command should be first written
to the system. The unlock bypass enter command
sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle contain-
ing the unlock bypass command, 20h. That bank
then enters the unlock-bypass program mode. A
two-cycle
unlock
bypass
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program set-up command, A0h; the
second cycle contains the program address and
data. Additional data is programmed in the same
manner. This mode dispenses with the initial two
unlock cycles required in the standard program com-
mand sequence, resulting in faster total program-
ming time. Table 9 shows the requirements for the
command sequence.
program
command
START
Verify Data
Increment Address
Write Program Com-
mand Sequence
Data Poll
from System
Last Address
Yes
Programming
Completed
Embedded
Program
algorithm in
progress
No
No
Yes
Note:
See Table 9 for program command sequence
Figure
8. Program Operation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL320D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL320D-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL320D-70TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL320D-70WC | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL320D-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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