參數(shù)資料
型號: ES29DL320
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
元件分類: FLASH
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4M×8/2M×16),3.0伏,CMOS,同時運(yùn)行閃存
文件頁數(shù): 20/59頁
文件大?。?/td> 791K
代理商: ES29DL320
ESI
20
Rev. 0E May 25, 2006
ES29DL320
Excel Semiconductor inc.
ADVANCED INFORMATION
Table 7. Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Description
02 = x8, x16 Asynchronous
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0007h+1 =8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0020h * 256byte = 8Kbyte
31h
32h
62h
64h
003Eh
0000h
Erase Block Region 2 Information
Number of identical size erase block = 003Eh+1 =63
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2 Information
Number of identical size erase block = 0100h * 256byte = 64Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Erase Block Region 3 Information
37h
38h
6Eh
70h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
72h
74h
0000h
0000h
Erase Block Region 4 Information
3Bh
3Ch
76h
78h
0000h
0000h
Erase Block Region 4 Information
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