| 型號 | 廠商 | 描述 |
| hn3g01 2 3 4 |
Toshiba Corporation | N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| hn3g01j 2 3 4 |
Toshiba Corporation | N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| hn4401 2 3 |
Semtech Corporation | NPN EXPITAXIAL SILICON TRANSISTOR |
| hn4402 2 3 |
Semtech Corporation | RESISTOR 62K OHM .25W CARB COMP |
| hn4403 2 3 |
Semtech Corporation | PNP EXPITAXIAL SILICON TRANSISTOR |
| hn462716g-1 2 3 4 5 |
x8 EPROM | |
| hn4827128g-25 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ag-17 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ag-20 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ag-25 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ag-30 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128agseries 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ap-20 2 3 4 5 6 7 |
x8 EPROM | |
| hn27128ap-25 2 3 4 5 6 7 |
x8 EPROM | |
| hn4827128g-30 2 3 4 5 6 7 |
x8 EPROM | |
| hn4827128g-45 2 3 4 5 6 7 |
x8 EPROM | |
| hn4827128p-30 2 3 4 5 6 7 |
x8 EPROM | |
| hn482732 2 3 4 5 6 7 |
x8 EPROM | |
| hn482732ag-20 2 3 4 5 6 7 |
x8 EPROM | |
| hn482732ag-30 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764g 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764g-2 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764g-3 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764g-4 2 3 4 5 6 7 |
x8 EPROM | |
| hn482764p-3 2 3 4 5 6 7 |
x8 EPROM | |
| hn4b101j 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| hn4c05jua 2 3 |
TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 | |
| hn4c05jub 2 3 |
TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 | |
| hn4c05ju 2 3 |
Toshiba Corporation | MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
| hn4d01ju 2 3 |
Toshiba Corporation | Ultra High Speed Switching Applications |
| hn4d02ju 2 3 |
Toshiba Corporation | Ultra High Speed Switching Applications |
| hn4g01j 2 3 4 5 6 |
Toshiba Corporation | Audio Frequency General Purpose Amplifier Applications |
| hn4k03ju 2 3 4 |
Toshiba Corporation | N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn549 2 3 4 5 |
Semtech Corporation | NPN Silicon Epitaxial Planar Transistor |
| hn5550 2 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications |
| hn5551 2 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications |
| hn556 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
| hn557 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
| hn558 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
| hn559 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
| hn58064p-25 2 3 4 5 6 |
Bottom entry type connector, Two-piece connector; HRS No: 547-0251-5 00; No. of Positions: 26; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm | |
| hn58064p-30 2 3 4 5 6 |
128Kx8 EEPROM | |
| hn58064series 2 3 4 5 6 |
128Kx8 EEPROM | |
| hn58c1001fp-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
128Kx8 EEPROM | |
| hn58c65series 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
128Kx8 EEPROM | |
| hn58c66fp-25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Bottom entry type connector, Two-piece connector; HRS No: 547-0253-0 00; No. of Positions: 40; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm | |
| hn58c66p-25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
128Kx8 EEPROM | |
| hn58c66series 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
128Kx8 EEPROM | |
| hn58c66t-25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Bottom entry type connector, Two-piece connector; HRS No: 547-0254-3 00; No. of Positions: 46; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm |