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參數(shù)資料
| 型號(hào)： | HN4B101J |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 硅晶體管進(jìn)步黨/ npn型外延式（厘進(jìn)程） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 248K |
| 代理商： | HN4B101J |
HN4B101J
2006-11-13
2
Figure 1. Circuit Configuration
(top view)
5
4
Figure 2. Marking
Electrical Characteristics
(Ta = 25°C)
PNP
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
30 V, I
E
=
0
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
=
0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
=
0
30
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.12 A
200
500
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
0.4 A
125
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
0.4 A, I
B
=
13 mA
0.20
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
0.4 A, I
B
=
13 mA
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f = 1MHz
7.8
pF
Rise time
t
r
40
Storage time
t
stg
200
Switching time
Fall time
t
f
See Figure 3 circuit diagram
V
CC
～
16 V, R
L
=
40
Ω
I
B1
=
I
B2
=
13 mA
45
ns
NPN
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50 V, I
E
=
0
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
=
0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
=
0
30
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.12 A
200
500
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
0.4 A
125
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
0.4 A, I
B
=
13 mA
0.17
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
0.4 A, I
B
=
13 mA
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f = 1MHz
7.0
pF
Rise time
t
r
45
Storage time
t
stg
450
Switching time
Fall time
t
f
See Figure 4 circuit diagram
V
CC
～
16 V, R
L
=
40
Ω
I
B1
=
I
B2
=
13 mA
50
ns
Figure 3. Switching Time Test Circuit & Timing Chart
Figure 4. Switching Time Test Circuit & Timing Chart
5 K
Part No.
(or abbreviation code)
NPN
PNP
1
2
3
Duty cycle
＜
1%
I
B1
20μs
I
B2
I
B1
I
B2
Input
Output
R
VCC
IB1
20
μ
s
IB2
IB1
IB2
Input
Output
RL
VCC
Duty cycle
＜
1%
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| HN4B101J(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 30V 1.2A SMV |
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| HN4C05JUA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
| HN4C05JUB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
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