參數(shù)資料
型號(hào)： HN4D02JU
廠商： Toshiba Corporation
英文描述： Ultra High Speed Switching Applications
中文描述： 超高速開關(guān)應(yīng)用
文件頁數(shù)： 1/3頁
文件大?。?/td> 184K
代理商： HN4D02JU
HN4D02JU
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN4D02JU
Ultra High Speed Switching Applications
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F (3)
= 0.90V (typ.)
: C
T
= 0.9pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
85
80
300*
100*
2*
200**
150
55
～
150
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
* : Unit rating; Total rating = unit rating × 1.5
** :Total rating
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
―
―
―
―
―
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
V
F
(2)
V
F
(3)
I
R
(1)
I
R
(2)
I
F
= 1mA
―
―
―
―
―
0.60
―
―
I
F
= 10mA
0.72
Forward voltage
I
F
= 100mA
0.90
1.20
V
V
R
= 30V
―
―
0.1
Reverse current
V
R
= 80V
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MHz
―
0.9
―
pF
Reverse recovery time
t
rr
―
I
F
= 10mA, Fig.1
―
1.6
―
ns
Fig. 1 Reverse Recovery Time (t
rr
) Test Circuit
1.ANODE1
2.CATHODE
3.ANODE2
4.ANODE3
5.ANODE4
JEDEC
―
JEITA
―
TOSHIBA
1-2V1C
Weight: 0.0062g (typ.)
Unit: mm
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