- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371871 > HN4B101J (Toshiba Corporation) Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD PDF資料下載
參數(shù)資料
| 型號(hào)： | HN4B101J |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 硅晶體管進(jìn)步黨/ npn型外延式（厘進(jìn)程） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 248K |
| 代理商： | HN4B101J |
HN4B101J
2006-11-13
1
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications
Switching Applications
Small footprint due to a small and thin package
High DC current gain :
h
FE
= 200 to 500 (I
C
=
0.12 A)
Low collector-emitter saturation
:
PNP V
CE (sat)
=
0.20 V (max)
: NPN V
CE (sat)
= 0.17 V (max)
High-speed switching
: PNP
t
f
=
45 ns (typ.)
: NPN
t
f
= 50 ns (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Symbol
PNP
NPN
Unit
Collector-base voltage
V
CBO
30
50
V
Collector-emitter voltage
V
CEO
30
30
V
Emitter-base voltage
V
EBO
7
7
V
DC (Note 1)
I
C
1.0
1.2
Collector current
Pulse (Note 1)
I
CP
5.0
5.0
A
Base current
I
B
120
120
mA
Collector power
dissipation (t = 10 s)
Single-device
operation
P
C
(Note 2)
0.85
W
Collector power
dissipation (DC)
Single-device
operation
P
C
(Note 2)
0.55
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
2
)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
1
2
3
4
5
1.6 -0.1
2.8 -0.3
0
+
1
2
±
0
1
±
0
0
0
+0.2
+0.2
+
0
0
±
0
1. Base (PNP)
2. Emitter (PNP/NPN)
3. Base (NPN)
4. Collector (NPN)
5. Collector (PNP)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN4C05JUA | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
| HN4C05JUB | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
| HN4C05JU | MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
| HN4D01JU | Ultra High Speed Switching Applications |
| HN4D02JU | Ultra High Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN4B101J(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 30V 1.2A SMV |
| HN4B102J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) |
| HN4C05JU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
| HN4C05JUA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
| HN4C05JUB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。