型號: | HN4B101J |
廠商: | Toshiba Corporation |
英文描述: | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
中文描述: | 硅晶體管進(jìn)步黨/ npn型外延式(厘進(jìn)程) |
文件頁數(shù): | 3/6頁 |
文件大?。?/td> | 248K |
代理商: | HN4B101J |
相關(guān)PDF資料 |
PDF描述 |
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HN4C05JUA | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
HN4C05JUB | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
HN4C05JU | MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
HN4D01JU | Ultra High Speed Switching Applications |
HN4D02JU | Ultra High Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HN4B101J(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 30V 1.2A SMV |
HN4B102J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) |
HN4C05JU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
HN4C05JUA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
HN4C05JUB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |