參數(shù)資料
型號: HN4B101J
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 硅晶體管進(jìn)步黨/ npn型外延式(厘進(jìn)程)
文件頁數(shù): 3/6頁
文件大?。?/td> 248K
代理商: HN4B101J
HN4B101J
2006-11-13
3
PNP
0.1
0.01
1
100
10
0.1
1
10
0.001
10
1
1000
100
0.01
0.1
Ta
=
100°C
55°C
25°C
0.001
0.1
1
10
1
0.01
0.1
Ta
=
55°C
100°C
25°C
0.001
0.001
1
1
0.1
0.01
0.01
0.1
Ta
=
100°C
55°C
25°C
0
0
0.8
1.2
1.6
0.8
1.0
55°C
Ta
=
100°C
25°C
C
I
C
B
e
V
B
Collector
emitter voltage
V
CE
(V)
I
C
– V
CE
C
I
C
Collector current
I
C
(A)
h
FE
– I
C
D
F
Collector current
I
C
(A)
V
CE (sat)
– I
C
C
e
V
C
Collector current
I
C
(A)
V
BE (sat)
– I
C
Base
emitter voltage
V
BE
(V)
I
C
– V
BE
Collector
emitter voltage
V
CE
(V)
Safe operating area
C
I
C
0
0
2
3
4
5
0.2
0.8
1.0
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
2
IB
=
1 mA
20
10
5
0.6
0.4
1
1 ms*
10 ms*
IC max (pulse) *
DC operation
Ta = 25°C
IC max (continuous)*
10 s*
IC max (pulse) *
100 ms*
0.2
0.4
0.6
0.4
V
10
μ
s*
100
μ
s*
8
6
4
3
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
Common emitter
β
=
30
Single nonrepetitive pulse
Common emitter
β
=
30
Single nonrepetitive pulse
Common emitter
VCE
=
2 V
Single nonrepetitive
pulse
*
: Single nonrepetitive pulse
Ta
=
25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu
area: 645 mm
).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
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