| 型號 | 廠商 | 描述 |
| hcpl-7800b-300 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
High CMR Isolation Amplifiers | |
| hcpl-7800b-500 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
High CMR Isolation Amplifiers | |
| hcpl-817 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-00a 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-00b 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-00c 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-00d 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-00l 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-060 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-300 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-817-500 2 3 4 5 6 |
Phototransistor Optocoupler High Density Mounting Type | |
| hcpl-9030 2 3 4 5 6 7 8 9 10 11 12 |
High Speed Digital Isolators | |
| hcpl-9031 2 3 4 5 6 7 8 9 10 11 12 |
High Speed Digital Isolators | |
| hcpl-j312 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
2.0 Amp Output Current IGBT Gate Drive Optocoupler(2.0 Amp 輸出電流 IGBT門驅(qū)動耦合器) | |
| hcpl-3120 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
2.0 Amp Output Current IGBT Gate Drive Optocoupler(2.0 Amp 輸出電流 IGBT門驅(qū)動耦合器) | |
| hcpl0201 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Receptacle With No Tail | |
| hcpl0211 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
LOGIC-GATE-OUTPUT OPTOCOUPLER | |
| hcpl1730 2 3 4 |
Optoelectronic | |
| hcpl1731 2 3 4 |
Optoelectronic | |
| hcpl1930 2 3 4 5 6 7 8 9 10 11 |
TRANSISTOR-STAGE-OUTPUT OPTOCOUPLER | |
| hcpl1931 2 3 4 5 6 7 8 9 10 11 |
LOGIC-GATE-OUTPUT OPTOCOUPLER | |
| hcpl193k 2 3 4 5 6 7 8 9 10 11 |
LOGIC-GATE-OUTPUT OPTOCOUPLER | |
| hcpl7100 2 3 4 5 6 7 8 9 10 11 12 13 14 |
HEATSHRINK FABRIC 1.18X200' | |
| hcpl7840 2 3 4 5 6 7 8 9 10 11 12 |
Analog Isolation Amplifier | |
| hcs00hmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | CAP CERM .22UF 10% 50V X7R 0805 |
| hcs00d 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NAND Gate |
| hcs00dmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | RES 1.65K-OHM 1% 0.10W 100PPM THK-FILM SMD-0603 TR-7-PA ROHS |
| hcs00k 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NAND Gate |
| hcs00kmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | Radiation Hardened Quad 2-Input NAND Gate |
| hcs00ms 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NAND Gate |
| hcs02d 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NOR Gate |
| hcs02dmsr 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened Quad 2-Input NOR Gate |
| hcs02k 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NOR Gate |
| hcs02kmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | Radiation Hardened Quad 2-Input NOR Gate |
| hcs02ms 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Quad 2-Input NOR Gate |
| hcs02hmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | Radiation Hardened Quad 2-Input NOR Gate |
| hcs04d 2 3 4 5 6 7 8 |
Intersil Corporation | JFET; Current Rating:5mA; Voltage Rating:-25V |
| hcs04kmsr 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | Radiation Hardened Hex Inverter |
| hcs04dmsr 2 3 4 5 6 7 8 |
INTERSIL CORP | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V |
| hcs04k 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened Hex Inverter |
| hcs04ms 2 3 4 5 6 7 8 |
Intersil Corporation | Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W |
| hcs04hmsr 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened Hex Inverter |
| hcs05d 2 3 4 5 6 7 |
Intersil Corporation | Radiation Hardened Hex Inverter with Open Drain |
| hcs05kmsr 2 3 4 5 6 7 |
INTERSIL CORP | Radiation Hardened Hex Inverter with Open Drain |
| hcs05dmsr 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V |
| hcs05k 2 3 4 5 6 7 |
Intersil Corporation | JFET-N-CHANNEL SWITCH |
| hcs05ms 2 3 4 5 6 7 |
Intersil Corporation | Bipolar Transistor; Power Dissipation, Pd:175W; DC Current Gain Min (hfe):10; Collector Current:20A; DC Current Gain Max (hfe):60; Power (Ptot):175W; Transistor Polarity:N Channel |
| hcs05hmsr 2 3 4 5 6 7 |
INTERSIL CORP | Radiation Hardened Hex Inverter with Open Drain |
| hcs100 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Microchip Technology Inc. | Bi-directional Authenticator(雙向文電鑒別碼) |
| hcs120 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Microchip Technology Inc. | Bi-directional Authenticator(雙向文電鑒別碼) |