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參數(shù)資料
| 型號(hào)： | HCS04D |
| 廠商： | Intersil Corporation |
| 英文描述： | JFET; Current Rating:5mA; Voltage Rating:-25V |
| 中文描述： | 輻射加固六角逆變器 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | HCS04D |
28
Specifications HCS04MS
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
-
-
-
-
Input to Yn
TPHL
VCC = 4.5V
+25
o
C
2
20
ns
TPLH
VCC = 4.5V
+25
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
3
μ
A
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518745
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HCS04KMSR | Radiation Hardened Hex Inverter |
| HCS04DMSR | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V |
| HCS04K | Radiation Hardened Hex Inverter |
| HCS04MS | Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W |
| HCS04HMSR | Radiation Hardened Hex Inverter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCS04DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
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