參數(shù)資料
型號： HCS02HMSR
廠商： HARRIS SEMICONDUCTOR
元件分類： 通用總線功能
英文描述： Radiation Hardened Quad 2-Input NOR Gate
中文描述： HC/UH SERIES, QUAD 2-INPUT NOR GATE, UUC14
文件頁數(shù)： 3/8頁
文件大?。?/td> 144K
代理商： HCS02HMSR
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Yn
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
Input to Yn
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
18
pF
1
+125
o
C, -55
o
C
-
26
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, (Note 3)
+25
o
C
-
-
-
Input to Yn
TPHL
VCC = 4.5V
+25
o
C
2
20
ns
TPLH
VCC = 4.5V
+25
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Specifications HCS02MS
Spec Number
518744
相關(guān)PDF資料
PDF描述
HCS04D JFET; Current Rating:5mA; Voltage Rating:-25V
HCS04KMSR Radiation Hardened Hex Inverter
HCS04DMSR JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
HCS04K Radiation Hardened Hex Inverter
HCS04MS Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HCS02K 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate
HCS02KMSR 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate
HCS02MS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate
HCS040Z55-S1 功能描述:線性和開關(guān)式電源 RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風格:Rack 長度: 寬度: 高度:
HCS04D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*