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參數(shù)資料
| 型號： | HCS05D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Hex Inverter with Open Drain |
| 中文描述： | 輻射硬化六角逆變器排水與開放 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HCS05D |
37
Specifications HCS05MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
+25
o
C
-
15
pF
1
+125
o
C, -55
o
C
-
23
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
1
15
ns
1
+125
o
C, -55
o
C
1
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V
+25
o
C
4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V , VIH = 3.85V, VIL = 1.65V,
IOL = 50
μ
A
+25
o
C
-
0.1
V
VCC = 4.5V , VIH = 3.15V, VIL = 1.35V,
IOL = 50
μ
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Three-State Output
Leakage Current
IOZH
VCC = 5.5V, Force Voltage = 0V or VCC
+25
o
C
-
±
50
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH =3.15V, VIL = 1.35V,
(Note 2)
+25
o
C
-
-
V
Propagation Delay
TPLZ
TPZL
VCC = 4.5V, VIH =4.5V, VIL = 0V
+25
o
C
2
20
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. DELTA PARAMETERS (+25
o
C)
PARAMETER
SYMBOL
GROUP B SUBGROUP
UNITS
Supply Current
ICC
+3
μ
A
Three-State Leaking Current
IOZH
±
200
nA
Output Current
IOL
-15
%
Spec Number
518829
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HCS05KMSR | Radiation Hardened Hex Inverter with Open Drain |
| HCS05DMSR | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V |
| HCS05K | JFET-N-CHANNEL SWITCH |
| HCS05MS | Bipolar Transistor; Power Dissipation, Pd:175W; DC Current Gain Min (hfe):10; Collector Current:20A; DC Current Gain Max (hfe):60; Power (Ptot):175W; Transistor Polarity:N Channel |
| HCS05HMSR | Radiation Hardened Hex Inverter with Open Drain |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCS05DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05KMSR | 制造商:Intersil Corporation 功能描述:BFFR/DRVR HEX INV OPEN DRAIN CMOS 14PIN CFLATPACK - Bulk |
| HCS05MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter with Open Drain |
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