參數(shù)資料
型號(hào): HCS04MS
廠商: Intersil Corporation
英文描述: Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W
中文描述: 輻射加固六角逆變器
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 104K
代理商: HCS04MS
32
HCS04MS
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20mm x 2.24mm
METALLIZATION:
Type: AlSi
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 x 4 mils
Metallization Mask Layout
HCS04MS
(
(
(
Y1 (2)
A2 (3)
Y2 (4)
A3 (5)
(12) Y6
(11) A5
(10) Y5
(9) A4
Y
G
Y
Spec Number
518745
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PDF描述
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