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| 型號(hào)： | DA28F016SA-080 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 12V PROM, 80 ns, PDSO56 |
| 封裝： | 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56 |
| 文件頁(yè)數(shù)： | 59/63頁(yè) |
| 文件大?。?/td> | 635K |
| 代理商： | DA28F016SA-080 |
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E
5.12 Erase and Word/Byte Program Performance
(3,5)
(Continued)
V
CC
= 5V ± 0.5V, 5V ± 0.25V, V
PP
= 5V ± 0.5V, T
A
= 0°C to +70°C
Symbol
Parameter
28F016SV FlashFile MEMORY
59
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,6,7
TBD
8.0
TBD
μs
Page Buffer Word Write Time
2,6,7
TBD
16.0
TBD
μs
t
WHRH
1A
t
WHRH
1B
t
WHRH
2
t
WHRH
3
Byte Program Time
2,7
TBD
20
TBD
μs
Word Program Time
2,7
TBD
25
TBD
μs
Block Program Time
2,7
TBD
1.4
TBD
sec
Byte Prog. Mode
Block Program Time
2,7
TBD
0.85
TBD
sec
Word Prog. Mode
Block Erase Time
2,7
TBD
1.0
TBD
sec
Full Chip Erase Time
2,7
TBD
32.0
TBD
sec
Erase Suspend Latency Time
to Read
4
1.0
9
55
μs
Auto Erase Suspend Latency
Time to Program
3.0
12
60
μs
V
CC
= 5V ± 0.5V, 5V ± 0.25V, V
PP
= 12V ± 0.6V, T
A
= 0°C to +70°C
Symbol
Parameter
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,6,7
TBD
2.1
TBD
μs
Page Buffer Word Write Time
2,6,7
TBD
4.1
TBD
μs
t
WHRH
1
t
WHRH
2
t
WHRH
3
Word/Byte Program Time
2,7
4.5
6
TBD
μs
Block Program Time
2,7
TBD
0.4
2.1
sec
Byte Prog. Mode
Block Program Time
2,7
TBD
0.2
1.0
sec
Word Prog. Mode
Block Erase Time
2
0.3
0.6
10
sec
Full Chip Erase Time
2,7
TBD
19.2
TBD
sec
Erase Suspend Latency Time
to Read
4
1.0
7
40
μs
Auto Erase Suspend Latency
Time to Program
3.0
10
45
μs
NOTES:
1.
2.
3.
4.
+25°C, and nominal voltages.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Specification applies to interrupt latency for single block erase. Suspend latency for erase all unlocked blocks operation
extends the maximum latency time to 270 μs.
Sampled, but not 100% tested. Guaranteed by design.
Assumes using the full Page Buffer to Program to Flash (256 bytes or 128 words).
The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
office for more information.
5.
6.
7.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DA28F016SA-100 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-120 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-150 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016XS15 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DA28F016SA100 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM |
| DA28F016SA-100 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-120 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-150 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM |
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